Probing the Strain States in Nanopatterned Strained SOI

Probing cellular behaviors through nanopatterned chitosan membranes

This paper describes a high-throughput method for developing physically modified chitosan membranes to probe the cellular behavior of MDCK epithelial cells and HIG-82 fibroblasts adhered onto these modified membranes. To prepare chitosan membranes with micro/nanoscaled features, we have demonstrated an easy-to-handle, facile approach that could be easily integrated with IC-based manufacturing p...

Impact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET

This study investigates the effects of oxide traps induced by SOI of various thicknesses (TSOI = 50, 70 and 90 nm) on the device performance and gate oxide TDDB reliability of Ni fully silicide metal-gate strained SOI MOSFETs capped with different stressed SiN contact-etch-stop-layer (CESL). The effects of different stress CESLs on the gate leakage currents of the SOI MOSFET devices are also in...

Two New Quadrilateral Elements Based on Strain States

In this paper, two new quadrilateral elements are formulated to solve plane problems. Low sensitivity to geometric distortion, no parasitic shear error, rotational invariance, and satisfying the Felippa pure bending test are characteristics of these suggested elements. One proposed element is formulated by establishing equilibrium equations for the second-order strain field. The other suggested...

Boron Diffusion in Strained and Strain-Relaxed SiGe

Strained Tetragonal States and Bain Paths in Metals

Paths of tetragonal states between two phases of a material, such as bcc and fcc, are called Bain paths. Two simple Bain paths can be defined in terms of special imposed stresses, one of which applies directly to strained epitaxial films. Each path goes far into the range of nonlinear elasticity and reaches a range of structural parameters in which the structure is inherently unstable. In this ...